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        FFA60UP30DN PDF Datasheet瀏覽和下載

        型號:
        FFA60UP30DN
        PDF下載:
        下載PDF文件 在線瀏覽文檔
        內容描述:
        [60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers]
        文件大小:
        5115 K
        文件頁數:
        2 Pages
        品牌Logo:
        品牌名稱:
        THINKISEMI [ Thinki Semiconductor Co., Ltd. ]



         瀏覽型號FFA60UP30DN的Datasheet PDF文件第2頁 
        FFA60UP30DN
        Pb
        Pb Free Plating Product
        FFA60UP30DN
        TO-3PB(TO-3PN)
        Cathode(Bottom Side Metal Heatsink)
        60Amperes,300Volts Dual Common Cathode Ultra Fast Recovery Rectifiers
        APPLICATION
        ·
        ·
        ·
        ·
        ·
        ·
        ·
        Freewheeling, Snubber, Clamp
        Inversion Welder
        PFC
        Plating Power Supply
        Ultrasonic Cleaner and Welder
        Converter & Chopper
        UPS
        PRODUCT FEATURE
        ·
        Ultrafast Recovery Time
        ·
        Soft Recovery Characteristics
        ·
        Low Recovery Loss
        ·
        Low Forward Voltage
        ·
        High Surge Current Capability
        ·
        Low Leakage Current
        Internal Configuration
        Base Backside
        Anode
        Anode
        Cathode
        GENERAL DESCRIPTION
        FFA60UP30DN using the lastest FRED FAB process(planar passivation chip) with ultrafast and soft recovery characteristic.
        Absolute Maximum Ratings
        Parameter
        Repetitive peak reverse voltage
        Continuous forward current
        Single pulse forward current
        Maximum repetitive forward current
        Operating junction
        Storage temperatures
        Symbol
        V
        RRM
        I
        F(AV)
        I
        FSM
        I
        FRM
        Tj
        Tstg
        Test Conditions
        Tc =110°C
        Tc =25°C
        Square wave, 20kHZ
        Values
        300
        60
        600
        150
        175
        -55 to +175
        °C
        °C
        A
        Units
        V
        Electrical characteristics (Ta=25°C unless otherwise specified)
        Parameter
        Breakdown voltage
        Blocking voltage
        Forward voltage
        (Per Diode)
        Reverse leakage
        current(Per Diode)
        Reverse recovery
        time(Per Diode)
        Symbol
        V
        BR
        ,
        V
        R
        V
        F
        Test Conditions
        I
        R
        =100μA
        I
        F
        =30A
        I
        F
        =30A, Tj =125°C
        V
        R
        = V
        RRM
        I
        R
        Tj=150°C, V
        R
        =300V
        I
        F
        =0.5A, I
        R
        =1A, I
        RR
        =0.25A
        I
        F
        =1A,V
        R
        =30V, di/dt =200A/us
        35
        26
        Min
        300
        0.96
        0.85
        1.20
        1.00
        10
        100
        45
        40
        μA
        V
        Typ.
        Max.
        Units
        t
        rr
        ns
        Thermal characteristics
        Junction-to-Case
        Paramter
        Symbol
        R
        θJC
        Typ
        0.8
        ℃/W
        Units
        Rev.08T
        ? 1995 Thinki Semiconductor Co., Ltd.
        Page 1/2
        http://www.thinkisemi.com.tw/
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