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        快速發布采購 管理采購信息

        GB488U PDF Datasheet瀏覽和下載

        型號:
        GB488U
        PDF下載:
        下載PDF文件 在線瀏覽文檔
        內容描述:
        [300A Stud Type Device Series-Standard Rectifier Diodes]
        文件大小:
        1677 K
        文件頁數:
        4 Pages
        品牌Logo:
        品牌名稱:
        THINKISEMI [ Thinki Semiconductor Co., Ltd. ]


         瀏覽型號GB488U的Datasheet PDF文件第2頁瀏覽型號GB488U的Datasheet PDF文件第3頁瀏覽型號GB488U的Datasheet PDF文件第4頁 
        GB488U/GB489UR
        Pb Free Plating Product
        GB488U/GB489UR
        Pb
        300A Stud Type Device Series-Standard Rectifier Diodes
        Feature
        Hermetic ceramics-metal stud structure
        Conform to national standard JB/T8949.2-1998
        Capacity of supporting high surge current
        I
        F(AV)
        V
        RRM
        I
        FSM
        I
        2
        t
        8.25
        64
        300A
        100-5000V
        KA
        KA
        2
        S
        Stud cathode and stud anode version
        Typical Application
        DC motor controls Controls DC power
        supply Turbo generator exciter
        AC switch and thermal control Synchronous motor exditation
        SYMBOL
        CHARCTERISTIC
        Mean forward current
        RMS current
        Repettive peak reverse
        voltage
        Repetitive peak current
        Surge on-state current
        TEST CONDITIONS
        180ehalf sine wawe
        sink
        50HZ Single heat
        T
        J
        (k)
        150
        150
        VALUE
        Min
        Max
        300
        3700
        UNIT
        A
        A
        V
        mA
        KA
        I
        F(AV)
        I
        F(RMS)
        V
        RRM
        I
        RRM
        I
        FSM
        I
        2
        t
        V
        TO
        r
        T
        V
        FM
        I
        rm
        t
        rr
        Q
        rr
        R
        th(j-h)
        F
        M
        T
        stq
        W
        t
        T
        C
        =98k
        V
        DRM
        &V
        RRM
        tp=10ms
        V
        DSM
        &V
        RSM=
        V
        DRM
        &V
        RRM+200V
        V
        RM=
        V
        RRM
        10ms half sine wave
        150
        150
        150
        150
        100
        5000
        15
        8.25
        68
        0.83
        0.91
        1.33
        70
        4.0
        140
        0.090
        I
        2
        t
        for fusing
        Threshold voltage
        On-state slop resistance
        Peak on-state voltage
        Reverse recovery
        Reverse recovery time
        V
        R
        =0.6V
        RRM
        KA
        2
        S
        V
        m?
        V
        A
        us
        uC
        k/W
        N
        k
        g
        Recovered charge
        Thermal impedance
        node to the shell
        Mounting force
        Stored temperature
        Weight
        I
        TM
        =30A,F=9.0KN
        I
        TM
        =30A tq=1000us
        Di/dt=-20A/us.
        V
        r
        =50V
        180
        esine
        wave, single heat sink
        150
        150
        85
        -40
        470
        120
        200
        Rev.08T
        ? 1995 Thinki Semiconductor Co., Ltd.
        Page 1/4
        http://www.thinkisemi.com.tw/
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