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        SFF2001GD PDF Datasheet瀏覽和下載

        型號:
        SFF2001GD
        PDF下載:
        下載PDF文件 在線瀏覽文檔
        內容描述:
        [20.0 Amperes Insulated Dual Doubler Polarity Super Fast Recovery Rectifiers]
        文件大小:
        804 K
        文件頁數:
        2 Pages
        品牌Logo:
        品牌名稱:
        THINKISEMI [ Thinki Semiconductor Co., Ltd. ]



         瀏覽型號SFF2001GD的Datasheet PDF文件第2頁 
        SFF2001GD thru SFF2008GD
        Pb Free Plating Product
        SFF2001GD thru SFF2008GD
        Pb
        20.0 Amperes Insulated Dual Doubler Polarity Super Fast Recovery Rectifiers
        Application
        Mechanical Data
        Case: ITO-220AB full plastic isolated package
        Epoxy: UL 94V-0 rate flame retardant
        Terminals: Solderable per MIL-STD-202
        method 208
        Polarity: As marked on diode body
        Mounting position: Any
        Weight: 1.90 gram approximately
        .055(1.4)
        .039(1.0)
        .035(0.9)
        .011(0.3)
        .1
        (2.55)
        .1
        (2.55)
        .161(4.1)MAX
        .543(13.8)
        .512(13.0)
        Automotive Inverters and Solar Inverters
        Plating Power Supply,SMPS and UPS
        Car Audio Amplifiers and Sound Device Systems
        .606(15.4)
        .583(14.8)
        Features
        Super fast switching for high efficiency
        Low forward voltage drop
        High current capability
        Low reverse leakage current
        High surge current capability
        ITO-220AB/TO-220F-3L
        .112(2.85)
        .100(2.55)
        .272(6.9)
        .248(6.3)
        .406(10.3)
        .381(9.7)
        .134(3.4)
        .118(3.0)
        Unit : inch (mm)
        .189(4.8)
        .165(4.2)
        .130(3.3)
        .114(2.9)
        .071(1.8)
        .055(1.4)
        .114(2.9)
        .098(2.5)
        .032(.8)
        MAX
        Case
        Case
        Case
        Case
        Negative
        Positive
        Common Cathode Common Anode
        Suffix "G"
        Suffix "GA"
        Doubler
        Tandem Polarity
        Suffix "GD"
        Series
        Tandem Polarity
        Suffix "GS"
        MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
        (T
        A
        =25°C unless otherwise noted)
        SFF
        PARAMETER
        SYMBOL 2001
        GD
        SFF
        2002
        GD
        SFF
        2003
        GD
        SFF
        2004
        GD
        SFF
        2005
        GD
        SFF
        2006
        GD
        SFF
        2007
        GD
        SFF
        2008 UNIT
        GD
        Maximum repetitive peak reverse voltage
        Maximum RMS voltage
        Maximum DC blocking voltage
        Maximum average forward rectified current
        Peak forward surge current, 8.3 ms single half sine-wave
        superimposed on rated load
        Maximum instantaneous forward voltage
        @ 10 A
        Maximum reverse current @ rated V
        R
        Maximum reverse recovery time (Note 2)
        Typical junction capacitance (Note 3)
        Typical thermal resistance
        Operating junction temperature range
        Storage temperature range
        Note 1: Pulse test with PW=300μs, 1% duty cycle
        Note 2: Test conditions: I
        F
        =0.5A, I
        R
        =1.0A, I
        RR
        =0.25A.
        (Note 1)
        T
        J
        =25°C
        T
        J
        =125°C
        V
        RRM
        V
        RMS
        V
        DC
        I
        F(AV)
        I
        FSM
        V
        F
        I
        R
        t
        rr
        C
        J
        R
        θJC
        T
        J
        T
        STG
        50
        35
        50
        100
        70
        100
        150
        105
        150
        200
        140
        200
        20
        150
        300
        210
        300
        400
        280
        400
        500
        350
        500
        600
        420
        600
        V
        V
        V
        A
        A
        0.975
        10
        400
        35
        90
        2.5
        - 55 to +150
        - 55 to +150
        1.3
        1.7
        V
        μA
        ns
        pF
        °C/W
        °C
        °C
        Note 3: Measured at 1 MHz and applied reverse voltage of 4.0 V DC.
        Rev.08T
        ? 1995 Thinki Semiconductor Co., Ltd.
        Page 1/2
        http://www.thinkisemi.com.tw/
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